ibex platform
For MRAM TEST
IBEX-WAT MRAM
Parametric Test
Operates with single or multi-channel configurations and is designed for Statistical Process Control (SPC) of the production yield at Wafer Acceptance Test (WAT), thanks to Process Control and Monitoring (PCM) of test structures.
IBEX-WS
FUNCTIONAL Test
Dedicated for testing bit arrays and Wafer Sort (WS) of System-on-Chip (SoC) with embedded MRAM (eMRAM) memories.
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A DEMO
Powering Faster
MRAM Innovation
Our turnkey MRAM test solutions help you cut development cycles, speed up ramp-to-production, and ensure smooth high-volume manufacturing. With industry-leading test speed and unmatched adaptability, Hprobe gives your engineering teams the tools they need to bring MRAM products to market faster and with reliability.
Advanced
Test Features
MRAM Device Coverage
Dedicated to testing MTJs and bit cells for STT-MRAM, SOT-MRAM & VC-MRAM.
High Throughput
Optimized for fast, production-ready testing.
Fast Magnetic Field Control
Variable magnetic fields for advanced switching characterization.
Ultra-Narrow Pulses
Fully compatible with commercial automated test equipment.
Flexible Probe Card Operation
Works with manual or automatic probe card loading.
200mm & 300mm Compatibility
Seamless operation on automated wafer probers.
IBEX
Capabilities
for MRAM
Magnetic-field sweeps with DC resistance sensing
IBEX sweeps perpendicular or in-plane magnetic fields while monitoring device resistance, giving you a clear view of switching behavior and data retention—up to 500 mT.
Ultra-fast pulse
testing
Ultra-fast pulses down to 300 ps and up to 5 V amplitude replicate real read/write conditions and validate device reliability.
MRAM Immunity
Testing
Ensures devices withstand external magnetic disturbances. IBEX applies precise 3-axis fields at wafer or packaged level directly on your DUT.
ACCURATE 3D
MAGNETIC FIELD
MRAM testing requires controlled magnetic fields and high-speed pulse measurements. IBEX by Hprobe is built to handle both with speed, accuracy, and full automation.
MRAM Test seqUence example
Continuity Test
Check opens and shorts in the DUT
Hysteresis / TMR
Extract R-H curve with easy axis linear sweep of magnetic field
(in-plane or perpendicular)
R (H,V)
Extract of R vs (H,V) curves with easy-axis linear sweep of magnetic field and linear sweep on voltage pulsed amplitude
BER Test
Extract the error rate through repeated read/write operations
Breakdown voltage
Extract breakdown voltage of the junction using DC current sweep
Testimonials and Reviews
from our clients
“Hprobe provides an ideal solution for ITRI’s devices, significantly accelerating the development process. ITRI has extensive experience using Hprobe as its primary MRAM testing platform. The unique 3D magnetic field design enables characterization of a wide variety of devices within a single test environment. Both in-plane and out-of-plane characteristics can be easily captured using one tool, making it possible to extract key parameters for memories and sensors.”
– CHEN GUAN LONG
Validation Engineer at ITRI
“With this tool, we can characterize MRAM devices either manually on 300 mm wafers or coupons, as well as fully automated across multiple wafers in a lot. We can extract various MRAM parameters by sweeping a magnetic field of up to 7000 Oersted across the device and measuring its resistance. In addition, we can apply pulse signals to mimic read/write operations. With the integrated chiller, we can extend our temperature measurement range from –40°C to 150°C. We’re very excited to explore the analytical possibilities this tool will offer.”
– MEIKE HINDENBERG
PhD Student at Fraunhofer IPMS